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E6A Semiconductor materials and devices: semiconductor materials; bipolar junction transistors; operation and types of field-effect transistors

  • E6A01 (C) In what application is gallium arsenide used as a semiconductor material? #card
    • A. In high-current rectifier circuits
    • B. In high-power audio circuits
    • C. In microwave circuits
    • D. In very low-frequency RF circuits
  • E6A02 (A) Which of the following semiconductor materials contains excess free electrons? #card
    • A. N-type
    • B. P-type
    • C. Bipolar
    • D. Insulated gate
  • E6A03 (C) Why does a PN-junction diode not conduct current when reverse biased? #card
    • A. Only P-type semiconductor material can conduct current
    • B. Only N-type semiconductor material can conduct current
    • C. Holes in P-type material and electrons in the N-type material are separated by the applied voltage, widening the depletion region
    • D. Excess holes in P-type material combine with the electrons in N-type material, converting the entire diode into an insulator
  • E6A04 (C) What is the name given to an impurity atom that adds holes to a semiconductor crystal structure? #card
    • A. Insulator impurity
    • B. N-type impurity
    • C. Acceptor impurity
    • D. Donor impurity
  • E6A05 (C) How does DC input impedance at the gate of a field-effect transistor (FET) compare with that of a bipolar transistor? #card
    • A. They are both low impedance
    • B. An FET has lower input impedance
    • C. An FET has higher input impedance
    • D. They are both high impedance
  • E6A06 (B) What is the beta of a bipolar junction transistor? #card
    • A. The frequency at which the current gain is reduced to 0.707
    • B. The change in collector current with respect to the change in base current
    • C. The breakdown voltage of the base-to-collector junction
    • D. The switching speed
  • E6A07 (D) Which of the following indicates that a silicon NPN junction transistor is biased on? #card
    • A. Base-to-emitter resistance of approximately 6 ohms to 7 ohms
    • B. Base-to-emitter resistance of approximately 0.6 ohms to 0.7 ohms
    • C. Base-to-emitter voltage of approximately 6 volts to 7 volts
    • D. Base-to-emitter voltage of approximately 0.6 volts to 0.7 volts
  • E6A08 (D) What is the term for the frequency at which the grounded-base current gain of a bipolar junction transistor has decreased to 0.7 of the gain obtainable at 1 kHz? #card
    • A. Corner frequency
    • B. Alpha rejection frequency
    • C. Beta cutoff frequency
    • D. Alpha cutoff frequency
  • E6A09 (A) What is a depletion-mode field-effect transistor (FET)? #card
    • A. An FET that exhibits a current flow between source and drain when no gate voltage is applied
    • B. An FET that has no current flow between source and drain when no gate voltage is applied
    • C. An FET that exhibits very high electron mobility due to a lack of holes in the N-type material
    • D. An FET for which holes are the majority carriers
  • E6A10 (B) In Figure E6-1, which is the schematic symbol for an N-channel dual-gate MOSFET? #card image.png
  • E6A11 (A) In Figure E6-1, which is the schematic symbol for a P-channel junction FET? #card image.png
  • E6A12 (D) What is the purpose of connecting Zener diodes between a MOSFET gate and its source or drain? #card
    • A. To provide a voltage reference for the correct amount of reverse-bias gate voltage
    • B. To protect the substrate from excessive voltages
    • C. To keep the gate voltage within specifications and prevent the device from overheating
    • D. To protect the gate from static damage